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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLV2042 UHF power transistor
Product specification Supersedes data of 1997 July 11 2000 May 08
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS * Common emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base.
1 Top view 4
MSA467
BLV2042
PINNING - SOT409A PIN 1, 4, 5 and 8 2 and 3 6 and 7 emitter base collector DESCRIPTION
8 handbook, halfpage
5
c b e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB 2-tone, class-AB f (MHz) 1950 1990 f1 = 1950; f2 = 1950.1 VCE (V) 26 26 26 PL (W) 4 4 4 (PEP) Gp (dB) 11 11 typ. 14 C (%) 40 40 typ. 35 dim (dBc) - - typ. -30
2000 May 08
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) collector current (average) total power dissipation storage temperature operating junction temperature Tmb = 25 C; note 1 open base open collector CONDITIONS open emitter - - - - - - -65 - MIN.
BLV2042
MAX. 60 28 4 1.2 1.2 14.6 +150 200 V V V A A
UNIT
W C C
1. Transistor with metallized ground plane mounted on a printed-circuit board, see "Mounting and soldering recommendations in the General part of the associated handbook".
handbook, halfpage
10
MGU192
handbook, halfpage
20
MGU193
IC (A)
Ptot (W)
16
12 1
(1)
8
4
10-1
1
10
VCE (V)
102
0 0 40 80 120 160 200 Ts (C)
(1) Ts = 60 C.
Fig.3 Fig.2 DC SOAR.
Total power dissipation as a function of the soldering point temperature.
2000 May 08
3
Philips Semiconductors
Product specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Note PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 14.6 W; Tmb = 25 C; note 1 VALUE 12
BLV2042
UNIT K/W
1. Transistor with metallized ground plane mounted on a printed-circuit board, see "Mounting and soldering recommendations in the General part of the associated handbook". CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 mA open base; IC = 10 mA open collector; IE = 0.5 mA VCE = 26 V; VBE = 0 VCE = 26 V; IC = 600 mA VCB = 26 V; IE = ie = 0; f = 1 MHz VCE = 26 V; IC = 0; f = 1 MHz MIN. 60 28 4 - 30 - - TYP. - - - - - 6 2.5 MAX. UNIT - - - 1.3 120 - - pF pF V V V mA
handbook, halfpage
120
MGD936
handbook, halfpage
50
MGD947
hFE
(1) (2)
C (pF) 40
80
30
20 40 10
Cc Cre 0 10 20 30 40 50 VCE (V)
0 0 0.4 0.8 1.2 IC (A) 1.6
0
(1) VCE = 26 V; tp = 500 s; = < 1 %. (2) VCE = 10 V.
f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Capacitance as a function of collector-emitter voltage; typical values.
2000 May 08
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB 2-tone, class-AB f (MHz) 1950 1990 f1 = 1950; f2 = 1950.1 VCE (V) 26 26 26 ICQ (mA) 15 15 15 PL (W) 4 4 4 (PEP) Gp (dB) 11 typ. 13 11 typ. 14
BLV2042
C (%) 40 typ. 43 40 typ. 35
dim (dBc) - - typ. -30
Ruggedness in class-AB operation The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 C.
handbook, halfpage
16
MGU190
80
Gp (dB) 12 Gp
C (%)
60
handbook, halfpage
6
MGU191
PL (W)
4
C
8 40
2 4 20
0 0 1 2 3 4 PL (W) 5
0
0 0 0.1 0.2 0.3 PD (W) 0.4
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz; Tmb = 25 C.
CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz; Tmb = 25 C.
Fig.6
Power gain and collector efficiency as functions of load power; typical values.
Fig.7
Load power as a function of drive power; typical values.
2000 May 08
5
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
handbook, halfpage
16
MGD950
Gp (dB) 12
Gp
80 C (%) 60
handbook, halfpage
6
MGL163
PL (PEP) (W) 4
8 C
40
2
4 20
0 0 1 2 3 4 PL (PEP) (W) 5
0
0 0 0.05 0.1 0.2 0.15 PD (PEP) (W)
VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz. VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
Fig.8
Power gain and collector efficiency as functions of peak envelope load power; typical values.
Fig.9
Peak envelope load power as a function of peak envelope drive power; typical values.
handbook, halfpage
-20
MGD951
handbook, halfpage
-20
MGD952
d3 (dBc) -30
dim (dBc)
(3) (2)
-30 d3
(1)
-40
d5 d7
-40 -50
-50 0 1 2 3 4 5 PL (PEP) (W)
-60
0
1
2
3
4 5 PL (PEP) (W)
VCE = 26 V; f1 = 1950 MHz; f2 = 1950.1 MHz. (1) ICQ = 15 mA. (2) ICQ = 40 mA. (3) ICQ = 60 mA. VCE = 26 V; ICQ = 15 mA; f1 = 1950 MHz; f2 = 1950.1 MHz.
Fig.10 Third order intermodulation distortion as a function of peak envelope load power; typical values.
Fig.11 Intermodulation distortion as a function of peak envelope load power; typical values.
2000 May 08
6
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLV2042
handbook, full pagewidth
C1 RF-in
,,,,,, ,,,,,, ,,,,, ,,,,,, ,,,,, ,,,,,, ,,,, ,,,,, ,,,,,, , , ,,,,,,
+Vbias L9 +VC C5 C4 C3 C11 C10 R1 C9 L1 L2 L4 L5 L3 DUT L7 L8 C2 L6 C6 C7
C8 RF-out
MGD961
Fig.12 Class-AB test circuit at 1950 MHz.
2000 May 08
7
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Figs 12 and 13) COMPONENT C1, C9 C2, C6 C3, C8 C4, C10 C5, C11 C7 L1 L2 L3 L4 L5 L6 L7 L8 L9 R1 Notes 1. American Technical Ceramics type 100B or capacitor of the same quality. 2. American Technical Ceramics type 100A or capacitor of the same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor tantalum SMD capacitor multilayer ceramic chip capacitor; note 2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 grade 4S2 ferroxcube chip-bead metal film resistor 100 ; 0.4 W VALUE 100 pF 3 pF 27 pF 100 nF 47 F; 35 V 1.2 pF 50 50 10 31 31 8.3 50 50 length 9.9 mm width 0.91 mm length 6.66 mm width 0.91 mm length 4 mm width 8 mm length 3 mm width 2 mm length 3 mm width 2 mm length 17.25 mm width 10.3 mm length 2.42 mm width 0.91 mm length 6.14 mm width 0.91 mm DIMENSIONS
BLV2042
CATALOGUE No.
2222 581 16641
4330 030 36301
3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (r = 6.15); thickness 0.64 mm.
2000 May 08
8
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
handbook, full pagewidth
70
41
C3 C11 C4 C5
L9 C10 R1 C9
C1
L1 C2
L2 L3
L4
L5 L6
L7 C6
L8 C7
C8
MGD965
Dimensions in mm. The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.13 Component layout for 1950 MHz class-AB test circuit.
2000 May 08
9
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
handbook, halfpage
8
MGD953
handbook, halfpage
12
MGD954
Zi () 6 xi
ZL () 8
XL
4 ri 4 2 RL
0 1800
1850
1900
1950
f (MHz)
2000
0 1800
1850
1900
1950
f (MHz)
2000
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 C.
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 C.
Fig.14 Input impedance as a function of frequency (series components); typical values.
Fig.15 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
16
MGD955
handbook, halfpage
Gp (dB) 12
Zi ZL
MBA451
8
Fig.17 Definition of transistor impedance.
4
MOUNTING RECOMMENDATIONS Heat from the device is transferred via the leads and the metallized underside. For optimum heat transfer it is recommended that the transistor be mounted on a grounded metallized area on the component side of the printed-circuit board. This metallized area should contain a large number of metallized, solder-filled through-holes. The non-component side of the printed-circuit board forms a ground plane. When the printed-circuit board is mounted on the heatsink using heatsink compound, a thermal resistance from mounting base to heatsink of 0.9 K/W can be attained. 10
0 1800
1850
1900
1950 f (MHz)
2000
VCE = 26 V; ICQ = 15 mA; PL = 4 W; Tmb = 25 C.
Fig.16 Power gain as a function of frequency; typical values.
2000 May 08
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Ceramic surface mounted package; 8 leads
BLV2042
SOT409A
D
A
D2
B
H1 8 5
w2 B L
c
H
E2
E
A 1 e b 4 w1
Q1
0
2.5 scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.23 0.18 0.009 0.007 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 1.02 0.51 0.040 0.020 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010
7 0 7 0
OUTLINE VERSION SOT409A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-01-27
2000 May 08
11
Philips Semiconductors
Product specification
UHF power transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BLV2042
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 May 08
12
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV2042
2000 May 08
13
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV2042
2000 May 08
14
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLV2042
2000 May 08
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp16
Date of release: 2000
May 08
Document order number:
9397 750 07006

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